JPH0454994B2 - - Google Patents

Info

Publication number
JPH0454994B2
JPH0454994B2 JP58023361A JP2336183A JPH0454994B2 JP H0454994 B2 JPH0454994 B2 JP H0454994B2 JP 58023361 A JP58023361 A JP 58023361A JP 2336183 A JP2336183 A JP 2336183A JP H0454994 B2 JPH0454994 B2 JP H0454994B2
Authority
JP
Japan
Prior art keywords
layer
region
gate electrode
lattice shape
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58023361A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59149058A (ja
Inventor
Yoshimitsu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP58023361A priority Critical patent/JPS59149058A/ja
Publication of JPS59149058A publication Critical patent/JPS59149058A/ja
Publication of JPH0454994B2 publication Critical patent/JPH0454994B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
JP58023361A 1983-02-15 1983-02-15 Ｍｏｓ型トランジスタ Granted JPS59149058A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58023361A JPS59149058A (ja) 1983-02-15 1983-02-15 Ｍｏｓ型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58023361A JPS59149058A (ja) 1983-02-15 1983-02-15 Ｍｏｓ型トランジスタ

Publications (2)

Publication Number Publication Date
JPS59149058A JPS59149058A (ja) 1984-08-25
JPH0454994B2 true JPH0454994B2 (en]) 1992-09-01

Family

ID=12108428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58023361A Granted JPS59149058A (ja) 1983-02-15 1983-02-15 Ｍｏｓ型トランジスタ

Country Status (1)

Country Link
JP (1) JPS59149058A (en])

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585505B2 (ja) * 1984-09-29 1997-02-26 株式会社東芝 導電変調型ｍｏｓｆｅｔ
US4823176A (en) * 1987-04-03 1989-04-18 General Electric Company Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
JPH07120798B2 (ja) * 1988-03-18 1995-12-20 三洋電機株式会社 縦型ｍｏｓｆｅｔ
JPH025484A (ja) * 1988-06-23 1990-01-10 Fuji Electric Co Ltd Ｍｏｓ型半導体素子
JPH02150068A (ja) * 1988-11-30 1990-06-08 Fuji Electric Co Ltd 二重拡散ｍｏｓｆｅｔ
JPH0396282A (ja) * 1989-09-08 1991-04-22 Fuji Electric Co Ltd 絶縁ゲート型半導体装置
JP2752184B2 (ja) * 1989-09-11 1998-05-18 株式会社東芝 電力用半導体装置
JPH0793436B2 (ja) * 1989-11-14 1995-10-09 三洋電機株式会社 縦型ｍｏｓｆｅｔ
IT1247293B (it) * 1990-05-09 1994-12-12 Int Rectifier Corp Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione
US5766966A (en) * 1996-02-09 1998-06-16 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
US5223732A (en) * 1991-05-28 1993-06-29 Motorola, Inc. Insulated gate semiconductor device with reduced based-to-source electrode short
JPH07142709A (ja) * 1993-06-22 1995-06-02 Nec Corp 縦型ｍｏｓｆｅｔ
JP7360974B2 (ja) * 2020-03-06 2023-10-13 日産自動車株式会社 半導体コンデンサおよびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide

Also Published As

Publication number Publication date
JPS59149058A (ja) 1984-08-25

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